Memory

Samsung is on track to start volume production of DDR5 and LPDDR5 memory next year using a manufacturing technology that will take advantage of extreme ultraviolet lithography (EUVL). In fact, Samsung has been playing with EUV-enabled DRAM fabrication process for a while and has already validated DDR4 memory with select partners. To date, Samsung has produced and shipped a million of DDR4 DRAM modules based on chips made using the company’s D1x process technology that uses EUV lithography. These modules have completed customer evaluations, which proves that Samsung’s 1st Generation EUV DRAM technology enables to build fine circuits. Samsung’s D1x is an experimental EUVL fabrication process that was used to make experimental DDR4 DRAMs, though it will not be used any further, the company said. Instead...

GlobalFoundries & Everspin Extend MRAM Pact to 12nm

白色妖精泷泽萝拉GlobalFoundries and Everspin have announced that the two have extended their Spin-transfer Torque (STT-MRAM) joint development agreement (JDA) to 12LP (12 nm FinFET) platform. The extension will enable GlobalFoundries...

4 by Anton Shilov on 3/13/2020

Rambus Develops HBM2E Controller & PHY: 3.2 Gbps, 1024-Bit Bus

白色妖精泷泽萝拉The latest enhancements to the HBM2 standard will clearly be appreciated by developers of memory bandwidth-hungry ASICs, however in order to add support of HBM2E to their designs, they...

30 by Anton Shilov on 3/6/2020

ATP’s DDR4-3200 Industrial DIMMs: Up to 128GB @ 1.2V for AMD & Intel

ATP has unveiled its latest memory modules for servers and industrial applications, boasting a 3200 MT/s data transfer rate, an industry-standard voltage, and capacities ranging from 2 GB to...

7 by Anton Shilov on 3/5/2020

Samsung Starts Production of 16 GB LPDDR5-5500 for Smartphones

Samsung has begun mass production of the industry’s first 16 GB LPDDR5 memory for upcoming smartphones, such as the Galaxy S20 Ultra 5G handsets. The new DRAM devices not...

32 by Anton Shilov on 2/25/2020

SMART Modular Reveals 32 GB DDR4-3200 Low Profile Mini-DIMMs for Extreme Environments

SMART Modular has unveiled a new lineup of 32 GB Mini-DIMMs for extreme environments, such as industrial or telecommunication applications. The new high-density modules come in ULP (Ultra Low...

7 by Anton Shilov on 2/14/2020

G.Skill Launches 256 GB DDR4-3600 CL16 Memory Kit

The arrival of 32 GB unbuffered DIMMs has not only allowed mainstream systems to reach 128 GB of memory, but it's also allowed high-end desktops based on AMD Ryzen...

8 by Anton Shilov on 2/12/2020

SK Hynix Licenses DBI Ultra Interconnect for Next-Gen 3DS and HBM DRAM

白色妖精泷泽萝拉SK Hynix has inked a new broad patent and technology licensing agreement with Xperi Corp. Among other things, the company licensed the DBI Ultra 2.5D/3D interconnect technology developed by...

9 by Anton Shilov on 2/11/2020

GIGABYTE Launches Designare DDR4-3200 Memory, a 64 GB Kit

白色妖精泷泽萝拉GIGABYTE is a relatively new player on the memory market, yet it clearly wants to participate in the premier league. As seen at CES, this week the company introduced...

22 by Anton Shilov on 2/6/2020

Micron Shipping LPDDR5 DRAM

Micron has announced their first LPDDR5 DRAM is in mass production and now shipping to customers. The new RAM is significantly faster and more power efficient than LPDDR4x. One...

32 by Billy Tallis on 2/6/2020

JEDEC Updates HBM2 Memory Standard To 3.2 Gbps; Samsung's Flashbolt Memory Nears Production

After a series of piecemeal announcements from different hardware vendors over the past year, the future of High Bandwidth Memory 2 (HBM2) is finally coming into focus. Continuing the...

24 by Ryan Smith on 2/3/2020

SK Hynix to Cut CapEx, Accelerate Transitions, 1z nm DRAM & 128L 4D NAND in 2020

Following a massive revenue and profitability drop in 2019, SK Hynix has announced that it plans to cut down its capital expenditures. While the market has shown some signs...

7 by Anton Shilov on 2/3/2020

Crucial’s 32 GB UDIMMs and SODIMMs Available: DDR4-2666 & DDR4-3200

白色妖精泷泽萝拉In the summer of 2019, Crucial was among the first brands to demonstrate 32 GB unbuffered memory modules, which were based on Micron’s 16 Gb DDR4 chips. Now after...

12 by Anton Shilov on 1/29/2020

The Corsair DDR4-5000 Vengeance LPX Review: Super-Binned, Super Exclusive

The consumer memory industry has been teasing DDR4-5000 for a few months now. We saw one company show some DDR4-5000 modules at Computex back in July 2019, running...

54 by Gavin Bonshor on 1/27/2020

Here's Some DDR5-4800: Hands-On First Look at Next Gen DRAM

Just like all major makers of DRAM, SK Hynix produced its first DDR5 memory chips a couple of years ago and has been experimenting with the technology since then...

39 by Anton Shilov on 1/13/2020

CES 2020: Kingston’s HyperX Adds 32 GB UDIMMs & New Fury Speed Bins to Lineup

白色妖精泷泽萝拉Kingston’s HyperX division introduced a stack of new memory modules at CES 2020. Firstly, the company added 32 GB unbuffered DIMMs and SO-DIMMs to its Fury and Impact families...

11 by Anton Shilov on 1/10/2020

DRAMeXchange: Blackout at Samsung’s Fab Will Not Affect Commodity DRAM Prices in Q1

Following a power outage and consequent disruption of production at Samsung’s Line 13 fab in Hwaseong, South Korea, back on December 31, 2019, there had been some concerns about...

4 by Anton Shilov on 1/9/2020

Fire At Kioxia & Western Digital NAND Fab - Impact on Supply to be Minimal

Kioxia has reportedly informed its customers that a production tool at one of its fabs caught fire early on Tuesday. The fire was promptly extinguished and no casualties were...

3 by Anton Shilov on 1/8/2020

CES 2020: Micron Begins to Sample DDR5 RDIMMs with Server Partners

Micron announced at CES that it had started sampling of its DDR5 Registered DIMMs with select partners. The very fact that Micron started sampling of DDR5 modules indicates that...

6 by Anton Shilov on 1/7/2020

Samsung’s Fab in Hwaseong Suffers Power Outage

Samsung had to stop production of DRAM and V-NAND memory at its fab near Hwaseong, South Korea, due to power outage earlier this week. Damage caused by disruption of...

48 by Anton Shilov on 1/2/2020

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